Archive image from page 184 of Device physics for engineering design. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells . devicephysicsfor00shib Year: 1979 177 io-10 f-T 10' = io-12 c o < 10 -15 T I T T Nc = 10 cm'3 10 i ,â i ,' ,,, 'ââ â ,'â ,1, ... L â!

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