. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. sc 10' 10" o CD CO ifc— 10 -8 10. **' S—aw—gwwwp*i 10 iC 20 10' Ns (cm~3) Figure The average Auger lifetime x^ (calculated by computer- aided analysis) versus Nc for P-tyoe silicon. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.

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