. The Bell System technical journal . tributed to an avalanche multipli-cation of carriers in high fields.^ The same mechanism may be responsiblefor breakdown of the germanium-electrolyte barrier; low and variablebreakdown voltages may be caused by the pits described below. The electrolyte-germanium barrier exhibits a kind of current multi-plication that differs from high-field multiplication in two respects: itoccurs at much lower reverse voltages and does not vary much withvoltage.^ This effect can be demonstrated very simply by comparisonwith a metal-germanium barrier, on the assumption tha
. The Bell System technical journal . tributed to an avalanche multipli-cation of carriers in high fields.^ The same mechanism may be responsiblefor breakdown of the germanium-electrolyte barrier; low and variablebreakdown voltages may be caused by the pits described below. The electrolyte-germanium barrier exhibits a kind of current multi-plication that differs from high-field multiplication in two respects: itoccurs at much lower reverse voltages and does not vary much withvoltage.^ This effect can be demonstrated very simply by comparisonwith a metal-germanium barrier, on the assumption that the latter hasa current multiplication factor of unity. This assumption is supportedby experiments which indicate that current flows almost entirely byhole flow, for good metal-germanium barriers. The experimental arrangement is indicated in Fig. 5(a) and (b). Thevoltage-current curves for an electrolyte barrier and a plated barrier onthe same slice of germanium are shown in Fig. 5(c).* The curves for the REFERENCEELECTRODE CATHODE. LIGHT Fig. 2 — Arrangement for obtaining voltage current characteristics. * In Fig. 5 the dark current for the phited barrier is much hirger than can beexphained on the basis of hole current; it is even higher than the dark current forthe electrolyte barrier, which should be at least times the hole current. Thisexcess dark current is believed to be leakage at the edges of the plated area andprobably does not affect the intrinsic current multiplication of the plated barrieras a whole. ELECTROLYTIC SHAPING OF GERMANIUM AND SILICON 337 10 2o a. 01 Ui oc LUQ. 5 I 10 / { - / - 1 / 7 / / / - /% - / / / / n/ ^ y i<:i 0 10 20 30 40 50 60 TEMPERATURE IN DEGREES CENTIGRADE Fig. 3 — Temperature variation of the saturation current of a barrier ohm-cm n-type germanium and 10 per cent KOH solution. illuminated condition were obtained by shining light on a dry face of aslice while the barriers were on the other face. The difference bet
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