. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 79. (cm-3) :igure The average Auger lifetime r, (calculated by computer- aided analysis) versus N,. for N-type silicon. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.

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