. The Bell System technical journal . wn in Fig. 2. These techniques serve merely to illustrate graphically the differencesin the two types of contact. Although both points when formed giverise to a formed region in the bulk germanium of similar size and shape,the diode characteristics of the junction under the donor-doped pointare degraded. The plating technique may also be adjusted to allow sensitivity to thecurrent flow pattern in a transistor with both points biased to operatingvalues. The example shown in Fig. 8 demonstrates visually the bulknature of the current flow in the point contact
. The Bell System technical journal . wn in Fig. 2. These techniques serve merely to illustrate graphically the differencesin the two types of contact. Although both points when formed giverise to a formed region in the bulk germanium of similar size and shape,the diode characteristics of the junction under the donor-doped pointare degraded. The plating technique may also be adjusted to allow sensitivity to thecurrent flow pattern in a transistor with both points biased to operatingvalues. The example shown in Fig. 8 demonstrates visually the bulknature of the current flow in the point contact transistor. Here the cop-per plates out on the negative regions of the crystal and is noticeablyabsent from the regions of high hole density under the emitter point. Inthe region to the left of the collector indicated by the arrow, the platingis partially obscured by masking. The size of the copper-free region underthe emitter point may be i-educed to substantially zero for the same /,by increasing the bias applied to the
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Keywords: ., bookcentury1900, bookdecade1920, booksubjecttechnology, bookyear1
