. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. P(Wc) â 0. P(WE) X = 0 (SURFACE) (SCR ED. ^X Figure Sketch of minority-carrier concentration in a heavily doped emitter having a graded impurity profile and a large defect density, after [9]. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.

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