. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. VL (/*m) £ Figure The transit time rt versus the width of the emitter region Wr for S = 5 x 105 cm/sec and a Gaussian profile with: no heavy doping (NHD), bandgap narrowing (Slotbcom-DeGraaff model) and Fermi Dirac statistics (BGN + FD), bandgap narrowing (Slotbocm-DeGraaff model) only (BGN^, and for a flat profile (NHD + flat). Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - colora
. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. VL (/*m) £ Figure The transit time rt versus the width of the emitter region Wr for S = 5 x 105 cm/sec and a Gaussian profile with: no heavy doping (NHD), bandgap narrowing (Slotbcom-DeGraaff model) and Fermi Dirac statistics (BGN + FD), bandgap narrowing (Slotbocm-DeGraaff model) only (BGN^, and for a flat profile (NHD + flat). Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.
Size: 1400px × 1785px
Photo credit: © Central Historic Books / Alamy / Afripics
License: Licensed
Model Released: No
Keywords: ., bookc, bookcentury1900, bookcollectionamericana, bookleafnumber62
