. The Bell System technical journal . 10-< cm thick. 4 THE BELL SYSTEM TECHNICAL JOURNAL, JANUARY 1956 niques employed in the fabrication of grown junction transistors. (b). However, a much simpler technique has been evolved. If the sur-face concentration of the donor diffusant is maintained below a certaincritical value, it is possible to alloy an aluminum wire directly throughthe diffused n-type layer and thus make effective contact to the baselayer, Fig. 2(c). Since the resistivity of the original silicon wafer is oneto five ohm-cm, the aluminum will be rectifying to this region. It
. The Bell System technical journal . 10-< cm thick. 4 THE BELL SYSTEM TECHNICAL JOURNAL, JANUARY 1956 niques employed in the fabrication of grown junction transistors. (b). However, a much simpler technique has been evolved. If the sur-face concentration of the donor diffusant is maintained below a certaincritical value, it is possible to alloy an aluminum wire directly throughthe diffused n-type layer and thus make effective contact to the baselayer, Fig. 2(c). Since the resistivity of the original silicon wafer is oneto five ohm-cm, the aluminum will be rectifying to this region. It hasbeen experimentally shown that if the surface concentration of thedonor diffusant is less than the critical value mentioned above, thealuminum will also be rectifying to the diffused n-type region and thecontact becomes merely an extension of the base layer. The n-layersproduced by diffusing from elemental antimony are below the criticalconcentration and the direct aluminum alloying technique is feasible. -n + TYPE DIFFUSED LAYER. -p-TYPE DIFFUSED LAYER n + n+
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