. The Bell System technical journal . ^ holes. If the current were chiefly capacitative at this junction,then the voltage would lag 90° behind the current. This adds a desirablephase lag in the hole injection across >Si and thus requires less phase shiftin the n-layer. By suitably adjusting the ratio of capacitative and in-ductive admittances, a net improvement in Q may be obtained. 4. THE TRANSIENT RESPONSE IN A UNIPOLAR STRUCTURE In the previous section the electric field produced by the injected holeshad a neghgible influence on the motion of the injected holes. In effect i Pi 1 N 1 P2 /
. The Bell System technical journal . ^ holes. If the current were chiefly capacitative at this junction,then the voltage would lag 90° behind the current. This adds a desirablephase lag in the hole injection across >Si and thus requires less phase shiftin the n-layer. By suitably adjusting the ratio of capacitative and in-ductive admittances, a net improvement in Q may be obtained. 4. THE TRANSIENT RESPONSE IN A UNIPOLAR STRUCTURE In the previous section the electric field produced by the injected holeshad a neghgible influence on the motion of the injected holes. In effect i Pi 1 N 1 P2 / (a). (b) Hg. — Space charge limited hole flow. NEGATIVE RESISTANCE IN SEMICONDUCTOR DIODES 813 this \\as due to the bipolar nature of the mode of operation considered,the majority cari-icrs in the region N acting to yhi(>l(l th(^ minority car-riers from their own space charge. In this section we shall deal with unipohir diodes in which only onetype of carrier is present in sufficient number to have a major effect. Inthese the influence of the space charge of the carriers upon their motionplays an important role. Fig. illustrates one example of the type of structure covered bythe theory of this section. It is again a p-n-p structure like that consideredin Section 3. However, in this case the dimensions, the donor densityand the applied potential are such that the space charge punchesthrough the device. Under these circumstances a condition of spacecharge limited emission is set up so that holes are injected from thepositive region Pi to just such an extent that their flow is li
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Keywords: ., bookcentury1900, bookdecade1920, booksubjecttechnology, bookyear1