. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 21 700. Ns (cm-3) Figure Vqq versus the surface concentration N$ for different values of Sp with Wr = ym. Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.


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