. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. V ro i O v Q Q ^ Q Q. Figure 6. The average actual doping density Nqq and the average ef- fective doping density NpDeff varsus the surface impurity concentration N$ for N-type silicon. Lanyon-Tuft model of energy bandgap narrowing and Fermi-Qirac statistics a^e Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the orig
. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. V ro i O v Q Q ^ Q Q. Figure 6. The average actual doping density Nqq and the average ef- fective doping density NpDeff varsus the surface impurity concentration N$ for N-type silicon. Lanyon-Tuft model of energy bandgap narrowing and Fermi-Qirac statistics a^e Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.
Size: 1283px × 1947px
Photo credit: © Paul Fearn / Alamy / Afripics
License: Licensed
Model Released: No
Keywords: ., bookcentury1900, bookcollectionamericana, bookcontributorunivers
