UHV chamber showing central viewing window for inspecting the growth of a metal crystal using the Czochralski method
Inside the shaft of the UHV or Ultra High Vacuum chamber is a shaft which is a water cooled copper electrode with a tunsten end electrode. On the end of this electrode is a titanium seed crystal. The crystall is lowered into a crucible of molten titanium at 1300 degrees centigrade as part of the Czochralski method of growing metal crystals. The Czochralski crystal growth method is a technique for growing single crystal metal ingots for use in manufacturing of high purity metallic materials such as semiconductor devices. The finished crystals are called boules. The shaft rotaes counter clockwise and the crucible rotates clockwise. The rotating shaft or rod is drawn upwards very slowly alloowing a cylindrical boule to form. A triarch crystal growth system is often used to produce high purity crystals of metallic materials. The equipment used is built to ultra high vacuum standards, although actual operation in vacuum is not possible. The main advantage of this method of crystal growth is the low possibility of contamination of the melt from its container and that high melting point materials can be handled. The presence of an inert gas such as argon, within the growth chamber, is necessary to maintain the arcs but prohibits operation in UHV, ultra high vacuum, the preferred environment for producing high purity crystals. The equipment is water cooled. The Czochralski technique is a way of growing crystals out of a seed of the material out of a molten bath of the material. It is a method by which all high purity metallic crystals are made and the kit to do it is very specialised.
Size: 3937px × 5906px
Location: UK, England, GB, Great Britain, Europe,
Photo credit: © NCP Images / Alamy / Afripics
License: Licensed
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