. The Bell System technical journal . (c) Nd>NaFig. 3 — Field and potential distributions in depletion region of p-n-i-p transistor. P-N-I-P AND N-P-I-N JUNXTION TRANSISTOR TRIODES 523 typical applied voltages are shown in Fig. 3 for p-n-i-p structures inwhich the depletion layer contains no net impurities (a), a small acceptordominance (b), and a small donor dominance (c). When collector voltageis increased from zero, the space charge layer thickens until it extendsfrom base to collector. Further increase of voltage simply increases thefield strength in the region, without significant furt
. The Bell System technical journal . (c) Nd>NaFig. 3 — Field and potential distributions in depletion region of p-n-i-p transistor. P-N-I-P AND N-P-I-N JUNXTION TRANSISTOR TRIODES 523 typical applied voltages are shown in Fig. 3 for p-n-i-p structures inwhich the depletion layer contains no net impurities (a), a small acceptordominance (b), and a small donor dominance (c). When collector voltageis increased from zero, the space charge layer thickens until it extendsfrom base to collector. Further increase of voltage simply increases thefield strength in the region, without significant further increase in itsthickness. The capacitance initially changes inversely as the square root ofcollector potential, but becomes constant when depletion region thick-ness becomes constant. The time required for holes to drift from base tocollector decreases with increase of depletion region field until scattering-limited carrier velocities are reached (about 5 X 10 cm/sec for holes,at 10,000 volts/cm).1 It should be noted that norma
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