. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 78. Nc (em3) Figure The average actual doping density N^ and the average ef- fective doping density NQDeff versus the surface impurity concentration N5 for P-type silicon. Lanycn-Tuft model of energy-bandgap narrowing and Fermi-Dir-ac statistics ere Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original wor

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. Device physics for engineering design of heavily doped regions in pn-junction silicon solar cells. Solar batteries. 78. Nc (em3) Figure The average actual doping density N^ and the average ef- fective doping density NQDeff versus the surface impurity concentration N5 for P-type silicon. Lanycn-Tuft model of energy-bandgap narrowing and Fermi-Dir-ac statistics ere Please note that these images are extracted from scanned page images that may have been digitally enhanced for readability - coloration and appearance of these illustrations may not perfectly resemble the original Shibib, Muhammed Ayman.

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